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STMicroelectronics Electronic Components Datasheet

STP3NC90Z Datasheet

N-CHANNEL MOSFET

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STP3NC90Z - STP3NC90ZFP
STB3NC90Z-1
N-CHANNEL 900V - 3.2- 3.5A TO-220/TO-220FP/I2PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STP3NC90Z/FP
900V
< 3.5
3.5 A
STB3NC90Z-1
900V
< 3.5
3.5 A
s TYPICAL RDS(on) = 3.2
s EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
TO-220
3
2
1
TO-220FP
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
123
I2PAK
(Tabless TO-220)
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
www.DataSheet4U.comof single-switch applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current (*)
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
January 2001
Value
Unit
STP(B)3NC90Z(-1) STP3NC90ZFP
900 V
900 V
± 25 V
3.5
3.5(*)
A
2.2
2.2(*)
A
14 14 A
100 35 W
0.8 0.28 W/°C
±50 mA
2.5 KV
3 V/ns
--
2000
V
–65 to 150
°C
150 °C
(1)ISD 3.5A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX
(*).Limited only by maximum temperature allowed
1/11
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STMicroelectronics Electronic Components Datasheet

STP3NC90Z Datasheet

N-CHANNEL MOSFET

No Preview Available !

www.DataSheet4U.com
STP3NC90Z/FP/STB3NC90Z-1
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
TO-220 / I2PAK
1.25
62
0.1
300
TO-220FP
3.57
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
3.5
220
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
900
BVDSS/TJ Breakdown Voltage Temp.
Coefficient
ID = 1 mA, VGS = 0
1
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
VGS = ±20V
±10
Cuwrrent (wVDS =w0) .DataSheet4U.com
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1.75 A
Min.
3
Typ.
4
3.2
Max.
5
3.5
ID(on)
On State Drain Current
VDS > ID(on) x RDS(on)max,
VGS = 10V
3.5
°C/W
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
V/°C
µA
µA
µA
Unit
V
A
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 1.75A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
3
1250
78
7
Max.
Unit
S
pF
pF
pF
2/11
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Part Number STP3NC90Z
Description N-CHANNEL MOSFET
Maker ST Microelectronics
Total Page 11 Pages
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