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STMicroelectronics Electronic Components Datasheet

STP4NC60A Datasheet

N-CHANNEL MOSFET

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STP4NC60A - STP4NC60AFP
STB4NC60A-1
N-CHANNEL 600V - 1.8- 4.2A TO-220/TO-220FP/I2PAK
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STP4NC60A
STP4NC60AFP
STB4NC60A-1
600V
600V
600V
< 2
< 2
< 2
4.2A
4.2A
4.2A
s TYPICAL RDS(on) = 1.8
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
TO-220
3
2
1
TO-220FP
123
(Tabless TO-220)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)ISD 4.2A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX.
July 2001
Value
STP(B)4NC60A(-1) STP4NC60AFP
600
600
±30
4.2 4.2(*)
2.6 2.6(*)
16.8 16.8(*)
100 35
0.8 0.28
3.5 3.5
- 2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
–60 to 150
(*)Limited only by maximum Temperature allowed
°C
1/10


STMicroelectronics Electronic Components Datasheet

STP4NC60A Datasheet

N-CHANNEL MOSFET

No Preview Available !

STP4NC60A/FP/STB4NC60A-1
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220/I2PAK
TO-220FP
1.25 3.57
62.5
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
4.2
250
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID =1.5 A
Min.
2
Typ.
3
1.8
Max.
4
2
Unit
V
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 2A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
3.7
475
72
10
Max.
Unit
S
pF
pF
pF
2/10


Part Number STP4NC60A
Description N-CHANNEL MOSFET
Maker ST Microelectronics
Total Page 10 Pages
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