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STMicroelectronics Electronic Components Datasheet

STP4NC80Z Datasheet

N-CHANNEL MOSFET

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STP4NC80Z - STP4NC80ZFP
STB4NC80Z - STB4NC80Z-1
N-CHANNEL 800V - 2.4- 4A TO-220/FP/D2PAK/I2PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STP4NC80Z/FP
www.DataSheet4U.cSoTmB4NC80Z/-1
800V
800V
< 2.8
< 2.8
4A
4A
s TYPICAL RDS(on) = 2.4
s EXTREMELY HIGH dv/dt AND CAPABILITY
GATE-TO- SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
TO-220
3
1
D2PAK
3
2
1
TO-220FP
I2PAK1 2 3
(Tabless TO-220)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt(1) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
December 2002
Value
Unit
STP(B)4NC80Z(-1) STP4NC80ZFP
800 V
800 V
± 25 V
4 4(*) A
2.5
2.5(*)
A
16
16(*)
A
100 35 W
0.8 0.28 W/°C
±50 mA
2.5 KV
3 V/ns
--
2000
V
–65 to 150
°C
150 °C
(1)ISD 4A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX
.(*)Pulse width Limited by maximum temperature allowed 1/13


STMicroelectronics Electronic Components Datasheet

STP4NC80Z Datasheet

N-CHANNEL MOSFET

No Preview Available !

STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220 / D2PAK /
I2PAK
1.25
30
300
TO-220FP
3.57
AVALANCHE CHARACTERISTICS
Symbol
Parameter
www.DataSheet4U.com IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
4
225
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
800
BVDSS/TJ Breakdown Voltage Temp.
Coefficient
ID = 1 mA, VGS = 0
0.9
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±20V
±10
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
V/°C
µA
µA
µA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2 A
Min.
3
Typ.
4
2.4
Max.
5
2.8
Unit
V
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 2A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
4
1200
90
11
Max.
Unit
S
pF
pF
pF
2/13


Part Number STP4NC80Z
Description N-CHANNEL MOSFET
Maker ST Microelectronics
Total Page 13 Pages
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