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STP55NE06L Datasheet

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

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STP55NE06L
STP55NE06LFP
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE” POWER MOSFET
TYPE
STP55NE06L
STP 55N E06LF P
VDSS
60 V
60 V
RDS(on)
< 0.022
< 0.022
s TYPICAL RDS(on) = 0.018
s EXCEPTIONAL dV/dt CAPABILTY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 oC
s HIGH dV/dt CAPABILITY
s APPLICATION ORIENTED
CHARACTERIZATION
ID
55 A
28 A
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
S ym b o l
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Volt age (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM ( )
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 o C
Derating Factor
VISO Insulation W it hstand Voltage (DC)
dV/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. O perating Junction Temperature
() Pulse width limited by safe operating area
December 1997
3
2
1
TO-220
3
2
1
TO220FP
INTERNAL SCHEMATIC DIAGRAM
V alu e
Unit
STP55NE06L ST P55NE06LFP
60 V
60 V
± 15
V
55 28 A
39 20 A
220 220 A
130
0. 86
35
0.23
W
W/oC
2000
V
7
-65 to 175
175
(1) ISD 55 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ns
oC
oC
1/6


STMicroelectronics Electronic Components Datasheet

STP55NE06L Datasheet

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

No Preview Available !

STP55NE06LFP
THERMAL DATA
Rt hj-ca se
Rt hj- amb
Rthc- si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
M ax
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
T O-2 20
T O-220F P
1.15
4. 28
62.5
0.5
300
oC/ W
oC/ W
oC/ W
oC
AVALANCHE CHARACTERISTICS
Symb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Max Value
55
250
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V(BR)DSS
IDSS
IGSS
P a ram et er
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
oC
Tc = 125
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15 V
Min.
60
Typ .
M a x.
Unit
V
1 µA
10 µA
± 100 nA
ON ()
Symb ol
V GS(th )
RDS( o n )
P a ram et er
Test Conditions
Gate T hreshold Voltage VDS = VGS ID = 250 µA
St atic Drain-source O n VGS = 5 V ID = 27.5 A
Resistance
VGS = 10 V ID = 27.5 A
Min.
1
Typ .
1.7
0.022
0.019
M a x.
2.5
0. 028
0. 022
Unit
V
ID(o n)
On Stat e Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
55
A
DYNAMIC
Symb ol
gfs ()
Ciss
Coss
Crss
P a ram et er
Forward
T r ans c on duc ta nc e
Input Capacitance
Output Capacitance
Reverse Transfer
Ca pac i ta nc e
Test Conditions
Min.
VDS > ID(on) x RDS(on)max ID =27.5 A 20
Typ .
30
M a x.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
2800
375
100
3750
500
140
pF
pF
pF
2/6


Part Number STP55NE06L
Description N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
Maker ST Microelectronics
Total Page 6 Pages
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