STP6NC90Z Datasheet - ST Microelectronics

N-CHANNEL Power MOSFET

STP6NC90Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

STP6NC90Z General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variet.

STP6NC90Z Datasheet (532.81 KB)

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STP6NC90Z

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STMicroelectronics ↗

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532.81 KB

Description:

N-channel power mosfet.
N-CHANNEL 900V - 1.55Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET TYPE STP6NC90Z STP6NC90ZFP STB6NC90Z STB6NC90Z-1 s s STP6NC9.

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STP6NC90Z N-CHANNEL Power MOSFET ST Microelectronics

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STP6NC90Z Features

STP6NC90Z General Description

Datasheet Details

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