STP70N10F4 Datasheet | STMicroelectronics

Features Type STB70N10F4 STD70N10F4 STP70N10F4 STW70N10F4 VDSS 100 V 100 V 100 V 100 V RDS(on) max < 0.0195 Ω < 0.0195 Ω < 0.0195 Ω < 0.0195 Ω ID 65 A 60 A 65 A 65 A - Exceptional dv/dt capability - Extremely low on-resistance RDS(on) - 100% avalanche tested Application - Switching applications Description This STrip FET™ Deep GATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performance. 3 2 1 TO-247 3 2 1 TO-220 3 1 DPAK 3 1 D²PAK Figure 1. Internal schematic diagram $ ' Table 1. Device summary Order codes STB70N10F4 STD70N10F4 STP70N10F4 STW70N10F4 Marking 70N10F4 70N10F4 70N10F4 70N10F4 3 !-V Package D²PAK DPAK TO-220 TO-247 Packaging Tape and reel Tape and reel Tube Tube October 2009 Doc ID 15207 Rev 3 1/18 .st. Contents Contents STB/D/P/W70N10F4 1 Electrical...