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STPSC10065DLF - power Schottky silicon carbide diode

General Description

This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Key Features

  • Less than 1 mm height package.
  • High creepage package.
  • No or negligible reverse recovery.
  • Temperature independent switching behavior.
  • High forward surge capability.
  • Very low drop forward voltage.
  • Power efficient product.
  • ECOPACK2 compliant component.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STPSC10065DLF Datasheet 650 V, 10 A power Schottky silicon carbide diode Product status link STPSC10065DLF Product summary Symbol Value IF(AV) 10 A VRRM 650 V VF(typ.) 1.30 V T j(max.) 175 °C Product label Features • Less than 1 mm height package • High creepage package • No or negligible reverse recovery • Temperature independent switching behavior • High forward surge capability • Very low drop forward voltage • Power efficient product • ECOPACK2 compliant component Applications • Boost PFC • Bootstrap diode • LLC clamping function • High frequency inverter applications Description This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate.