Datasheet Details
| Part number | STPSC10H12G2Y-TR |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 372.40 KB |
| Description | silicon carbide power Schottky diode |
| Datasheet | STPSC10H12G2Y-TR-STMicroelectronics.pdf |
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Overview: STPSC10H12G2Y-TR Datasheet Automotive 1200 V, 10 A, silicon carbide power Schottky diode A1 K K A A NC D²PAK HV Product label Product status link STPSC10H12G2Y-TR Product summary IF(AV) 10 A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.
| Part number | STPSC10H12G2Y-TR |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 372.40 KB |
| Description | silicon carbide power Schottky diode |
| Datasheet | STPSC10H12G2Y-TR-STMicroelectronics.pdf |
|
|
|
This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating.
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|---|---|
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