Datasheet Details
| Part number | STPSC10H12G2Y-TR |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 372.40 KB |
| Description | silicon carbide power Schottky diode |
| Datasheet |
 STPSC10H12G2Y-TR Datasheet
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| Part number | STPSC10H12G2Y-TR |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 372.40 KB |
| Description | silicon carbide power Schottky diode |
| Datasheet |
STPSC10H12G2Y-TR Datasheet
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This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating.