STPSC10H12G2Y-TR Description
This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating.
STPSC10H12G2Y-TR Key Features
- AEC-Q101 qualified
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Robust high voltage periphery
- PPAP capable
- Operating Tj from -40 °C to 175 °C
- Low VF
- D²PAK HV creepage distance (anode to cathode) = 5.38 mm min
- ECOPACK2 pliant