STPSC8H065-Y diode equivalent, automotive 650v 8a high surge silicon carbide power schottky diode.
* AEC-Q101 qualified
* No reverse recovery charge in application current range
* Switching behavior independent of temperature
* Recommended to PFC applic.
* PPAP capable
* VRRM guaranteed from -40 to 175 °C
* D²PAK HV creepage distance (anode to cathode) = 5.38 m.
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, n.
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