STPSC8H065-Y Description
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
STPSC8H065-Y Key Features
- AEC-Q101 qualified
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- Remended to PFC