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STPSC8TH13TI - Dual 650V power Schottky silicon carbide diode

General Description

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Key Features

  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Suited for specific bridge-less topologies.
  • High forward surge capability.
  • Insulated package:.
  • Capacitance: 7 pF.
  • Insulated voltage: 2500 V rms Datasheet - production data.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STPSC8TH13TI Dual 650 V power Schottky silicon carbide diode in series    ,QVXODWHG72$%  Features  No or negligible reverse recovery  Switching behavior independent of temperature  Suited for specific bridge-less topologies  High forward surge capability  Insulated package: – Capacitance: 7 pF – Insulated voltage: 2500 V rms Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.