STPSC8TH13TI Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
STPSC8TH13TI Key Features
- No or negligible reverse recovery
- Suited for specific bridge-less topologies
- High forward surge capability
- Insulated package
- Capacitance: 7 pF
- Insulated voltage: 2500 V rms
- production data
- VF (2) Forward voltage drop
- 1. Pulse test: tp = 10 ms, < 2% 2. Pulse test: tp = 500 µs, < 2%