STPSC8TH13TI
STPSC8TH13TI is Dual 650V power Schottky silicon carbide diode manufactured by STMicroelectronics.
Dual 650 V power Schottky silicon carbide diode in series
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Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Suited for specific bridge-less topologies
- High forward surge capability
- Insulated package:
- Capacitance: 7 pF
- Insulated voltage: 2500 V rms
- production data
Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are...
