STMicroelectronics STPSC8H065-Y
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate.| Part No. | STPSC8H065-Y |
|---|---|
| Datasheet | STPSC8H065-Y Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive 650V 8A high surge silicon carbide power Schottky diode |
| Buy | Stock & Price |
FEATURES
● AEC-Q101 qualified● No reverse recovery charge in application current range
● Switching behavior independent of temperature
● Recommended to PFC applications
● PPAP capable
● VRRM guaranteed from -40 to 175 °C
● D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating)
● ECOPACK®2 compliant component
APPLICATIONS
● On board chargerDESCRIPTION
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-
