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STPSC8H065-Y - Automotive 650V 8A high surge silicon carbide power Schottky diode

General Description

The SiC diode is an ultra-high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Key Features

  • AEC-Q101 qualified.
  • No reverse recovery charge in.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STPSC8H065-Y Datasheet Automotive 650 V, 8 A high surge silicon carbide power Schottky diode AK K A A NC D²PAK HV K KA NC DPAK Product label Product status STPSC8H065-Y Product summary Symbol Value IF(AV) 8A VRRM 650 V Tj(max.) 175 °C Features • AEC-Q101 qualified • No reverse recovery charge in application current range • Switching behavior independent of temperature • Recommended to PFC applications • PPAP capable • VRRM guaranteed from -40 to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating) • ECOPACK®2 compliant component Applications • On board charger Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate.