Datasheet Details
| Part number | STPSC8H065-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 401.81 KB |
| Description | Automotive 650V 8A high surge silicon carbide power Schottky diode |
| Datasheet | STPSC8H065-Y-STMicroelectronics.pdf |
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Overview: STPSC8H065-Y Datasheet Automotive 650 V, 8 A high surge silicon carbide power Schottky diode AK K A A NC D²PAK HV K KA NC DPAK Product label Product status STPSC8H065-Y Product summary Symbol Value IF(AV) 8A VRRM 650 V Tj(max.
| Part number | STPSC8H065-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 401.81 KB |
| Description | Automotive 650V 8A high surge silicon carbide power Schottky diode |
| Datasheet | STPSC8H065-Y-STMicroelectronics.pdf |
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The SiC diode is an ultra-high performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
| Part Number | Description |
|---|---|
| STPSC8H065 | 650V 8A high surge silicon carbide power Schottky diode |
| STPSC8H065DLF | 650V power Schottky silicon carbide diode |
| STPSC806D | 600 V power Schottky silicon carbide diode |
| STPSC8TH13TI | Dual 650V power Schottky silicon carbide diode |
| STPSC10065 | Schottky silicon carbide diode |
| STPSC10065DLF | power Schottky silicon carbide diode |
| STPSC1006D | 600 V power Schottky silicon carbide diode |
| STPSC10H065 | power Schottky silicon carbide diode |
| STPSC10H065-Y | Automotive 650V power Schottky silicon carbide diode |
| STPSC10H065BY-TR | Schottky silicon carbide diode |