STPSC8H065-Y datasheet by STMicroelectronics.
| Part number | STPSC8H065-Y |
|---|---|
| Datasheet | STPSC8H065-Y-STMicroelectronics.pdf |
| File Size | 401.81 KB |
| Manufacturer | STMicroelectronics |
| Description | Automotive 650V 8A high surge silicon carbide power Schottky diode |
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The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
View all STMicroelectronics datasheets
| Part Number | Description |
|---|---|
| STPSC8H065 | 650V 8A high surge silicon carbide power Schottky diode |
| STPSC8H065DLF | 650V power Schottky silicon carbide diode |
| STPSC806D | 600 V power Schottky silicon carbide diode |
| STPSC8TH13TI | Dual 650V power Schottky silicon carbide diode |
| STPSC10065 | Schottky silicon carbide diode |
| STPSC10065DLF | power Schottky silicon carbide diode |
| STPSC1006D | 600 V power Schottky silicon carbide diode |
| STPSC10H065 | power Schottky silicon carbide diode |
| STPSC10H065-Y | Automotive 650V power Schottky silicon carbide diode |
| STPSC10H065BY-TR | Schottky silicon carbide diode |
