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N-CHANNEL 100V - 0.3 Ω - 1A TO-92 STripFET™ POWER MOSFET
TYPE STQ1NE10L
s s s s s
STQ1NE10L
VDSS 100 V
RDS(on) <0.4 Ω
ID 1A
TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY LOW THRESHOLD DRIVE
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES, etc.