Datasheet4U Logo Datasheet4U.com

STQ1HNK60R - N-CHANNEL MOSFET

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Key Features

  • TYPE STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60 s s s s s s Figure 1: Package ID 1A 1A 0.4 A 0.4 A Pw 30 W 30 W 3W 3.3 W Ω Ω Ω Ω VDSS 600 600 600 600 V V V V RDS(on) < < < < 8.5 8.5 8.5 8.5 3 1.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STQ1HNC60 N-CHANNEL MOSFET ST Microelectronics
STQ1016 250 - 1000 MHz Direct Quadrature Modulator ETC
STQ1016Z (STQ-x016Z) Reliability Qualification Report ETC
STQ1NC45 N-CHANNEL MOSFET ST Microelectronics
STQ1NC45R-AP N-channel MOSFET ST MICROELECTRONICS

Other Datasheets by STMicroelectronics

Part Number Description
STQ1HNK60R-AP N-CHANNEL MOSFET
STQ1HN60K3-AP N-CHANNEL MOSFET
STQ1NK80ZR-AP N-channel Power MOSFET
STQ2HNK60ZR-AP N-channel Power MOSFET
STQ2LN60K3-AP N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH™ MOSFET Table 1: General Features TYPE STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60 s s s s s s Figure 1: Package ID 1A 1A 0.4 A 0.4 A Pw 30 W 30 W 3W 3.3 W Ω Ω Ω Ω VDSS 600 600 600 600 V V V V RDS(on) < < < < 8.5 8.5 8.5 8.5 3 1 TYPICAL RDS(on) = 8 Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-92 (Ammopack) DPAK 2 3 2 1 1 2 3 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.