STMicroelectronics STQ1HNK60R-AP
N-CHANNEL MOSFET
| Part No. | STQ1HNK60R-AP |
|---|---|
| Datasheet | STQ1HNK60R-AP Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS STN1HNK60 STQ1HNK60R-AP 600 V● Extremely high dv/dt capability
● 100% avalanche tested
● Gate charge minimized
APPLICATIONS
● Switching applications RDS(on) max. 8.5 Ω ID 0.4 A Package SOT-223 TO-92DESCRIPTION
G(1) These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant S(3) reduction in on-resistance, these devices are designed to ensure a high level of dv/dt Int_schem_nTnZ_SOT_223 capability for the most demanding applications. Product status STN1HNK60 STQ1HNK60R-AP DS12594 - Rev 1 - August 2018 For further information contact your local STMicroelectronics sales office. STN1HNK60, STQ1HNK60R-AP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VDGR Drain-gate voltage (RGS = 20 kΩ) VGS Gate- source voltage ID Drain current (continuous)...
