STQ1HNK60R-AP Description
G(1) These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant S(3) reduction in on-resistance, these devices are designed to ensure a high level of dv/dt Int_schem_nTnZ_SOT_223 capability for the most demanding applications. Product status STN1HNK60...
STQ1HNK60R-AP Key Features
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized