STQ1HNK60R-AP Datasheet | STMicroelectronics

STN1HNK60, STQ1HNK60R-AP N-channel 600 V, 7.3 Ω typ., 0.4 A SuperMESH™ Power MOSFETs in a SOT-223 and TO-92 packages 4 1 23 SOT-223 3 2 1 TO-92 (Ammopack) D(2, 4) Features Order code STN1HNK60 STQ1HNK60R-AP 600 V - Extremely high dv/dt capability - 100% avalanche tested - Gate charge minimized Applications - Switching applications RDS(on) max. 8.5 Ω ID 0.4 A Package SOT-223 TO-92 Description G(1) These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant S(3) reduction in on-resistance, these devices are...