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STQ2LN60K3-AP - N-channel Power MOSFET

General Description

This MDmesh™ K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure.

Key Features

  • Order code VDS STQ2LN60K3-AP 600 V RDS(on) max 4.5 Ω ID PTOT 0.6 A 2.5 W 2 1 TO-92 ammopack 3 Figure 1: Internal schematic diagram D(2) G(1).
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STQ2LN60K3-AP N-channel 600 V, 4 Ω typ., 0.6 A MDmesh™ K3 Power MOSFET in a TO-92 package Datasheet - production data Features Order code VDS STQ2LN60K3-AP 600 V RDS(on) max 4.5 Ω ID PTOT 0.6 A 2.5 W 2 1 TO-92 ammopack 3 Figure 1: Internal schematic diagram D(2) G(1)  100% avalanche tested  Extremely high dv/dt capability  Very low intrinsic capacitance  Improved diode reverse recovery characteristics  Zener-protected Applications  Switching applications Description This MDmesh™ K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure.