STQ1HN60K3-AP
STQ1HN60K3-AP is N-CHANNEL MOSFET manufactured by STMicroelectronics.
N-channel 600 V, 6.7 Ω typ., 0.4 A SuperMESH3™ Power MOSFET in a TO-92 package
- production data
3 2 1
TO-92
Figure 1. Internal schematic diagram
D(2)
Features
Order code
STQ1HN60K3-AP 600 V
RDS(on) max
8Ω
ID PTOT 0.4 A 3 W
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected
Applications
- Switching applications
G(1) S(3)
AM01476v1
Description
This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, bined with a new optimized vertical structure. This device...
