STMicroelectronics STQ1HN60K3-AP
This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.| Part No. | STQ1HN60K3-AP |
|---|---|
| Datasheet | STQ1HN60K3-AP Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS STQ1HN60K3-AP 600 V RDS(on) max 8Ω ID PTOT 0.4 A 3 W● 100% avalanche tested
● Extremely high dv/dt capability
● Gate charge minimized
● Very low intrinsic capacitance
● Improved diode reverse recovery characteristics
● Zener-protected
APPLICATIONS
● Switching applications G(1) S(3) AM01476v1DESCRIPTION
Order code STQ1HN60K3-AP Table 1. Device summary Marking Package 1HN60K3 TO-92 Packaging Ammopack April 2013 This is information on a product in full production. DocID024427 Rev 1 1/14 14 Contents Contents STQ1HN60K3-AP 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
