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STQ1HN60K3-AP Datasheet N-channel MOSFET

Manufacturer: STMicroelectronics

Overview: STQ1HN60K3-AP N-channel 600 V, 6.7 Ω typ., 0.4 A SuperMESH3™ Power MOSFET in a TO-92 package Datasheet − production data 3 2 1 TO-92 Figure 1.

General Description

This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.

Order code STQ1HN60K3-AP Table 1.

Key Features

  • Order code VDS STQ1HN60K3-AP 600 V RDS(on) max 8Ω ID PTOT 0.4 A 3 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

STQ1HN60K3-AP Distributor