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STQ2HNK60ZR-AP - N-channel Power MOSFET

General Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH.

Key Features

  • Order codes VDS STQ2HNK60ZR-AP 600 V.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Zener-protected RDS(on) max. 4.8 Ω ID 500 mA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STQ2HNK60ZR-AP Datasheet N-channel 600 V, 3.5 Ω typ., 500 mA SuperMESH Power MOSFET in a TO-92 package 3 2 1 TO-92 ammopack D(2) G(1) S(3) AM01476v1 Features Order codes VDS STQ2HNK60ZR-AP 600 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected RDS(on) max. 4.8 Ω ID 500 mA Applications • Switching applications Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.