STMicroelectronics STQ2HNK60ZR-AP
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH.| Part No. | STQ2HNK60ZR-AP |
|---|---|
| Datasheet | STQ2HNK60ZR-AP Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes VDS STQ2HNK60ZR-AP 600 V● 100% avalanche tested
● Gate charge minimized
● Very low intrinsic capacitance
● Zener-protected RDS(on) max. 4.8 Ω ID 500 mA
APPLICATIONS
● Switching applicationsDESCRIPTION
In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STQ2HNK60ZR-AP Product summary Order code STQ2HNK60ZR-AP Marking Q2HNK60ZR Package TO-92 Packing Ammopack DS13847 - Rev 1 - October 2021 For further information contact your local STMicroelectronics sales office. STQ2HNK60ZR-AP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT VISO Total power dissipation at TL = 25 °C Insulation withstand voltage (RMS) from all three leads to ext...
