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STQ1NK60ZR - N-CHANNEL MOSFET

General Description

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout.

Key Features

  • 4 3 2 1 SOT-223 TO-92 (Ammopak) Figure 1. Internal schematic diagram D(2,4) G(1) S(3) AM01476v1 Order codes VDS RDS(on)max ID PTOT STN1NK60Z 600 V STQ1NK60ZR-AP 15 Ω 3.3 W 0.3 A 3W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • ESD improved capability.
  • Zener-protected.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STN1NK60Z, STQ1NK60ZR N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH™ Power MOSFETs in SOT-223 and TO-92 packages Datasheet - production data Features 4 3 2 1 SOT-223 TO-92 (Ammopak) Figure 1. Internal schematic diagram D(2,4) G(1) S(3) AM01476v1 Order codes VDS RDS(on)max ID PTOT STN1NK60Z 600 V STQ1NK60ZR-AP 15 Ω 3.3 W 0.3 A 3W • 100% avalanche tested • Extremely high dv/dt capability • Gate charge minimized • ESD improved capability • Zener-protected Applications • Switching applications Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout.