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STS10PF30L Datasheet

P-CHANNEL POWER MOSFET

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STS10PF30L
P-CHANNEL 30V - 0.012 - 10A SO-8
STripFET™ II POWER MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
STS10PF30L
30V <0.014 10 A
TYPICAL RDS(on) = 0.012
STANDARDOUTLINEFOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
Figure 1:Package
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance.
SO-8
APPLICATIONS
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
LOAD SWITCH
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
SALES TYPE
STS10PF30L
MARKING
S10PF30L
PACKAGE
SO-8
PACKAGING
TAPE & REEL
Table 3: ABSOLUTE MAXIMUM RATING
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
May 2005
Value
Unit
30 V
30 V
± 16
V
10 A
6A
40 A
2.5 W
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
Rev. 2.0
1/9


STMicroelectronics Electronic Components Datasheet

STS10PF30L Datasheet

P-CHANNEL POWER MOSFET

No Preview Available !

www.DataSheet4U.com
STS10PF30L
Table 4: THERMAL DATA
Rthj-amb
Rthj-lead
Tl
Tstg
(*) Thermal Resistance Junction-ambient
Thermal Resistance Junction-leads
Maximum Lead Temperature For Soldering Purpose
storage temperature
(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t 10 sec.
Max
Max
Typ
47
16
150
-55 to 150
°C/W
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
Table 5: OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
30
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
Max.
1
10
±100
Unit
V
µA
µA
nA
Table 6: ON (*)
Symbol
Parameter
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
VGS = 4.5 V
ID = 5 A
ID = 5 A
Min.
1
Typ. Max.
0.012 0.014
0.015 0.018
Unit
V
Table 7: DYNAMIC
Symbol
Parameter
gfs Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 10 V
ID = 5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
31
2300
750
115
Max.
Unit
S
pF
pF
pF
2/9


Part Number STS10PF30L
Description P-CHANNEL POWER MOSFET
Maker STMicroelectronics
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STS10PF30L Datasheet PDF






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