Datasheet Summary
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N-channel 30V
- 0.004Ω
- 17A
- SO-8 STripFET™ Power MOSFET for DC-DC conversion
TARGET SPECIFICATION
General Features
Type STS17NH3LL VDSS 30V RDS(on) <0.0057Ω ID 17A(1)
1. This value is rated according to Rthj-pcb
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Optimal RDS(on) x Qg trade-off @ 4.5 V Conduction losses reduced Improved junction-case thermal resistance Low threshold device SO-8
Description
This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced.
Internal schematic diagram
Applications
- Switching...