900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




STMicroelectronics Electronic Components Datasheet

STS1NK60Z Datasheet

N-CHANNEL Power MOSFET

No Preview Available !

STS1NK60Z
N-CHANNEL 600V - 13- 0.25A - SO-8
Zener-Protected SuperMESH™ Power MOSFET
TYPE
VDSS
RDS(on)
ID
STS1NK60Z 600 V < 15 0.25 A
TYPICAL RDS(on) = 13
EXTREMELY HIGH dv/dt CAPABILITY
ESD IMPROVED CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
Pw
2W
SO-8
www.DataSheet4U.com
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
AC ADAPTORS AND BATTERY CHARGERS
SWITH MODE POWER SUPPLIES (SMPS)
ORDERING INFORMATION
SALES TYPE
MARKING
STS1NK60Z
S1NK60Z
PACKAGE
SO-8
PACKAGING
TAPE & REEL
June 2003
1/8


STMicroelectronics Electronic Components Datasheet

STS1NK60Z Datasheet

N-CHANNEL Power MOSFET

No Preview Available !

STS1NK60Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 0.3A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
Value
600
600
± 30
0.25
0.16
1
2
0.016
800
4.5
-55 to 150
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
°C
THERMAL DATA
Rthj-amb Thermal Resistance Junction-ambient Max
www.DataSheet4U.com
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
62.5 °C/W
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/8


Part Number STS1NK60Z
Description N-CHANNEL Power MOSFET
Maker STMicroelectronics
Total Page 8 Pages
PDF Download

STS1NK60Z Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 STS1NK60Z N-CHANNEL Power MOSFET
STMicroelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy