STS25N3LLH6 Description
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power density has to be achieved. O bs t e l o r P e u d o ) s ( ct o s b O - e t le Internal schematic diagram o r P c u d ) s...
STS25N3LLH6 Key Features
- VDSS 30 V
- Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low
- Switching