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STS26N3LLH6 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STS26N3LLH6 N-channel 30 V, 0.0038 Ω, 26 A, SO-8 STripFET™ VI DeepGATE™ Power.

General Description

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

8 76 5 1 2 34 SO-8 Figure 1.

Internal schematic diagram Table 1.

Key Features

  • Type STS26N3LLH6 VDSS 30 V RDS(on) max 0.0044 Ω.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses.
  • Very low switching gate charge ID 26 A.

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