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STS26N3LLH6 - N-channel Power MOSFET

General Description

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Figure 1.

Table 1.

Key Features

  • Type STS26N3LLH6 VDSS 30 V RDS(on) max 0.0044 Ω.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses.
  • Very low switching gate charge ID 26 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STS26N3LLH6 N-channel 30 V, 0.0038 Ω, 26 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET Features Type STS26N3LLH6 VDSS 30 V RDS(on) max 0.0044 Ω ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge ID 26 A Applications ■ Switching applications Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 8 76 5 1 2 34 SO-8 Figure 1. Internal schematic diagram Table 1. Device summary Order code STS26N3LLH6 Marking 26G3L Packag SO-8 Packaging Tape and reel October 2011 Doc ID 019030 Rev 2 1/14 www.st.