Description
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power den
Features
- Type STS25N3LLH6.
- VDSS 30 V
RDS(on) max 0.0032 Ω
ID 22 A
RDS(on).
- Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge SO-8.
STS25N3LLH6 Datasheet
