STS25N3LLH6 Datasheet | STMicroelectronics

.. N-channel 30 V, 0.0025 Ω, 22 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET Preliminary Data Features Type STS25N3LLH6 - - - - - VDSS 30 V RDS(on) max 0.0032 Ω ID 22 A RDS(on) - Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge SO-8 Application - Switching applications Figure 1. Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter...