STS20N3LLH6 Description
STS20N3LLH6 N-channel 30 V, 0.004 Ω, 20 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET.
STS20N3LLH6 Key Features
- Qg industry benchmark uc- Extremely low on-resistance RDS(on) d- High avalanche ruggedness ro- Low gate drive power loss