STS20N3LLH6 Datasheet | STMicroelectronics

N-channel 30 V, 0.004 Ω, 20 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max 30 V 0.0047 Ω 20 A t(s)- RDS(on) - Qg industry benchmark uc- Extremely low on-resistance RDS(on) d- High avalanche ruggedness ro- Low gate drive power losses P- Very low switching gate charge leteApplication so- Switching applications - ObDescription t(s)This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, ucwith a new gate structure.The resulting Power dMOSFET exhibits the lowest RDS(on) in all Obsolete Propackages. SO-8 Figure 1. Internal schematic diagram Table 1. Device summary Order...