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STS20N3LLH6 - N-channel MOSFET

General Description

ucwith a new gate structure.The resulting Power dMOSFET exhibits the lowest RDS(on) in all Obsolete Propackages.

SO-8 Figure 1.

Table 1.

Key Features

  • Type VDSS RDS(on) max ID STS20N3LLH6 30 V 0.0047 Ω 20 A t(s).
  • RDS(on).
  • Qg industry benchmark uc.
  • Extremely low on-resistance RDS(on) d.
  • High avalanche ruggedness ro.
  • Low gate drive power losses P.
  • Very low switching gate charge lete.

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STS20N3LLH6 N-channel 30 V, 0.004 Ω, 20 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STS20N3LLH6 30 V 0.0047 Ω 20 A t(s)■ RDS(on) * Qg industry benchmark uc■ Extremely low on-resistance RDS(on) d■ High avalanche ruggedness ro■ Low gate drive power losses P■ Very low switching gate charge leteApplication so■ Switching applications - ObDescription t(s)This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, ucwith a new gate structure.The resulting Power dMOSFET exhibits the lowest RDS(on) in all Obsolete Propackages. SO-8 Figure 1. Internal schematic diagram Table 1. Device summary Order code STS20N3LLH6 Marking 20G3L Package SO-8 Packaging Tape and reel March 2010 Doc ID 15528 Rev 2 1/13 www.st.