Datasheet Summary
N-channel 30 V, 0.0038 Ω, 26 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET
Features
Type STS26N3LLH6
VDSS 30 V
RDS(on) max
0.0044 Ω
- RDS(on)
- Qg industry benchmark
- Extremely low on-resistance RDS(on)
- High avalanche ruggedness
- Low gate drive power losses
- Very low switching gate charge
ID 26 A
Applications
- Switching applications
Description
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
8 76 5 1 2 34
SO-8
Figure 1. Internal schematic diagram
Table 1. Device summary Order code
Marking 26G3L
Packag...