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STS7C4F30L
N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET™ POWER MOSFET
TYPE STS7C4F30L(N-Channel) STS7C4F30L(P-Channel)
s s s
VDSS 30 V 30 V
RDS(on) <0.022 Ω <0.080 Ω
ID 7A 4A
s
TYPICAL RDS(on) (N-Channel) = 0.018 Ω TYPICAL RDS(on) (P-Channel) = 0.070 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE SO-8
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.