STS9D8NH3LL Key Features
- Optimal RDS(on) x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced
- Switching
- Part: STS9D8NH3LL
- Manufacturer: STMicroelectronics (official site)
- Size: 461.18 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STS9P2UH7 | P-channel Power MOSFET |
| STS9P3LLH6 | P-Channel Power MOSFET |
| STS10P3LLH6 | P-channel Power MOSFET |
| STS10P4LLF6 | P-Channel Power MOSFET |
| STS10PF30L | P-CHANNEL POWER MOSFET |
STS9D8NH3LL Description
This device uses the latest advanced design rules of ST’s STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 packages in DC-DC converters.