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STS9D8NH3LL - Dual N-channel Power MOSFET

General Description

This device uses the latest advanced design rules of ST’s STrip based technology.

The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses.

Key Features

  • www. DataSheet4U. com Type Q1 Q2 VDSS 30V 30V RDS(on) < 0.022Ω < 0.015Ω Qg 7nC 8nC ID 8A 9A STS9D8NH3LL.
  • Optimal RDS(on) x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced S0-8.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STS9D8NH3LL Dual N-channel 30 V - 0.012 Ω - 9 A - SO-8 low on-resistance STripFET™ Power MOSFET Features www.DataSheet4U.com Type Q1 Q2 VDSS 30V 30V RDS(on) < 0.022Ω < 0.015Ω Qg 7nC 8nC ID 8A 9A STS9D8NH3LL ■ ■ ■ Optimal RDS(on) x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced S0-8 Application ■ Switching applications Figure 1. Internal schematic diagram Description This device uses the latest advanced design rules of ST’s STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 packages in DC-DC converters. Table 1.