STS9D8NH3LL mosfet equivalent, dual n-channel power mosfet.
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Type Q1 Q2
VDSS 30V 30V
RDS(on) < 0.022Ω < 0.015Ω
Qg 7nC 8nC
ID 8A 9A
STS9D8NH3LL
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Optimal RDS(on) x Qg trade-off @ 4.5V Condu.
Figure 1. Internal schematic diagram
Description
This device uses the latest advanced design rules of ST’s STrip based .
This device uses the latest advanced design rules of ST’s STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power.
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