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STS9P3LLH6 Datasheet P-Channel Power MOSFET

Manufacturer: STMicroelectronics

General Description

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Product status link STS9P3LLH6 Product summary Order code STS9P3LLH6 Marking 9K3L Package SO-8 Packing Tape and reel DS10146 - Rev 3 - February 2021 For further information contact your local STMicroelectronics sales office.

Overview

STS9P3LLH6 Datasheet P-channel -30 V, 12 mΩ typ., -9 A, STripFET H6 Power MOSFET in an SO-8 package 5 8 4 1 SO-8 D(5, 6, 7, 8) G(4) S(1, 2, 3).

Key Features

  • Order code VDS STS9P3LLH6 -30 V.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss RDS(on) max. ID 15 mΩ -9 A.