STS9D8NH3LL Description
This device uses the latest advanced design rules of ST’s STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 packages in DC-DC converters.
STS9D8NH3LL Key Features
- Optimal RDS(on) x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced
- Switching