STS9D8NH3LL Datasheet | STMicroelectronics

Dual N-channel 30 V - 0.012 Ω - 9 A - SO-8 low on-resistance STrip FET™ Power MOSFET Features .. Type Q1 Q2 VDSS 30V 30V RDS(on) < 0.022Ω < 0.015Ω Qg 7n C 8n C ID 8A 9A - - - Optimal RDS(on) x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced S0-8 Application - Switching applications Figure 1. Internal schematic diagram Description This device uses the latest advanced design rules of ST’s STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 packages in DC-DC converters. Table 1. Device summary Order code Marking 9D8H3LLPackage SO-8 Packaging Tape & reel December 2007 Rev 3 1/14 .st. 14 Contents Contents 1 2 Electrical ratings - - -...