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STS9P2UH7 - P-channel Power MOSFET

General Description

This device exhibits low on-state resistance and capacitance for improved conduction and switching performance.

Key Features

  • Order code STS9P2UH7 VDS 20 V RDS(on) max 0.0225 Ω @ 4.5 V ID 9A.
  • Very low on-resistance.
  • Very low capacitance and gate charge.
  • High avalanche ruggedness.
  • Ultra logic level.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STS9P2UH7 P-channel 20 V, 0.0195 Ω typ., 9 A STripFET™ H7 Power MOSFET in a SO-8 package Datasheet - production data 5 8 1 SO-8 4 Figure 1: Internal schematic diagram Features Order code STS9P2UH7 VDS 20 V RDS(on) max 0.0225 Ω @ 4.5 V ID 9A  Very low on-resistance  Very low capacitance and gate charge  High avalanche ruggedness  Ultra logic level Applications  Switching applications Description This device exhibits low on-state resistance and capacitance for improved conduction and switching performance. Order code STS9P2UH7 Table 1: Device summary Marking Package 9L2U SO-8 Packaging Tape and reel For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed.