STS9P2UH7 Datasheet | STMicroelectronics

P-channel 20 V, 0.0195 Ω typ., 9 A STrip FET™ H7 Power MOSFET in a SO-8 package - production data 5 8 SO-8 Figure 1: Internal schematic diagram Features Order code STS9P2UH7 VDS 20 V RDS(on) max 0.0225 Ω @ 4.5 V ID 9A - Very low on-resistance - Very low capacitance and gate charge - High avalanche ruggedness - Ultra logic level Applications - Switching applications Description This device exhibits low on-state resistance and capacitance for improved conduction and switching performance. Order code STS9P2UH7 Table 1: Device summary Marking Package 9L2U SO-8 Packaging Tape and reel For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. January 2015 Doc ID025143 Rev 3 This is information on a product in full production. 1/15...