STT7P2UH7 Datasheet, STMicroelectronics

Order code STT7P2UH7 VDS 20 V RDS(on) max 0.0225 Ω @ 4.5 V ID 7A For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed..

* Switching applications Description This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench .

This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations. Table 1: Device summary .