STU6N60M2 - N-channel Power MOSFET

STMicroelectronics

Datasheet Details

Part number	STU6N60M2
Manufacturer	STMicroelectronics ↗
File Size	1.04 MB
Description	N-channel Power MOSFET
Datasheet	STU6N60M2-STMicroelectronics.pdf

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

Order codes STF6N60M2 STP6N60M2 STU6N60M2 VDS @ TJmax RDS(on) max ID 650 V 1.2 Ω 4.5 A.
Extremely low gate charge.
Lower RDS(on) x area vs previous generation.
Low gate input resistance.
100% avalanche tested.
Zener-protected.

📁 STU6N60M2 Similar Datasheet

STU600S - N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STU6010 - SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR (EIC discrete Semiconductors)
STU601S - P-Channel Logic Level Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STU6025NL - N-Channel Logic Level Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STU6025NLS - N-Channel Logic Level Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STU602S - N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STU606S - N-Channel Logic Level Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STU607S - N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)

Other Datasheets by STMicroelectronics

Published: Jul 7, 2015 |