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STU6N95K5 - N-channel Power MOSFET

General Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order codes VDS RDS(on) max. STD6N95K5 STP6N95K5 STU6N95K5 950 V 1.25 Ω STW6N95K5.
  • DPAK 950 V worldwide best RDS(on).
  • Worldwide best FOM (figure of merit).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected ID 9A PTOT 90 W G(1).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD6N95K5, STP6N95K5 STU6N95K5, STW6N95K5 Datasheet N-channel 950 V, 1 Ω typ., 9 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220, IPAK and TO-247 packages TAB DPAK 3 1 TAB TAB TO-220 1 23 IPAK 123 TO-247 D(2, TAB) 3 2 1 Features Order codes VDS RDS(on) max. STD6N95K5 STP6N95K5 STU6N95K5 950 V 1.25 Ω STW6N95K5 • DPAK 950 V worldwide best RDS(on) • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100% avalanche tested • Zener-protected ID 9A PTOT 90 W G(1) Applications • Switching applications S(3) AM01475V1 Product status link STD6N95K5 STP6N95K5 STU6N95K5 STW6N95K5 Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.