STU6N95K5 Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. DS6666 - Rev 5 - March 2018 For further information contact your local.
STU6N95K5 Key Features
- DPAK 950 V worldwide best RDS(on)
- Worldwide best FOM (figure of merit)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected