STMicroelectronics STU6N60M2
This is information on a product in full production.| Part No. | STU6N60M2 |
|---|---|
| Datasheet | STU6N60M2 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes STF6N60M2 STP6N60M2 STU6N60M2 VDS @ TJmax RDS(on) max ID 650 V 1.2 Ω 4.5 A● Extremely low gate charge
● Lower RDS(on) x area vs previous generation
● Low gate input resistance
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applications AM15572v1DESCRIPTION
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. Order codes STF6N60M2 STP6N60M2 STU6N60M2 Table 1. Device summary Marking Package 6N60M2 TO-220FP TO-220 IPAK June 2013 DocID024771 Rev 1 Packaging Tube 1/18 Contents Contents STF6N60M2, STP6N60M2, STU6N60M2 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
