STU6N62K3 Datasheet | STMicroelectronics

Features Order codes STF6N62K3 STFI6N62K3 STI6N62K3 STP6N62K3 STU6N62K3 VDSS RDS(on) max. ID 620 V < 1.2 Ω 5.5 A PTOT 30 W 30 W 90 W 90 W 90 W - 100% avalanche tested - Extremely high dv/dt capability - Gate charge minimized - Very low intrinsic capacitance - Improved diode reverse recovery characteristics - Zener-protected Applications - Switching applications 3 2 1 TO-220FP 3 2 1 TO-220 I²PAK 1 23 I²PAK FP IPAK 2 1 Figure 1. Internal schematic diagram D(2,TAB) Description These Super MESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ Super MESH™ technology, bined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high...