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STU6N65K3 - N-channel Power MOSFET

Datasheet Summary

Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Features

  • Order codes VDSS RDS(on) max. STF6N65K3 STFI6N65K3 650 V < 1.3 Ω STU6N65K3 ID 5.4 A Ptot 30 W 110 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

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Datasheet preview – STU6N65K3

Datasheet Details

Part number STU6N65K3
Manufacturer STMicroelectronics
File Size 426.08 KB
Description N-channel Power MOSFET
Datasheet download datasheet STU6N65K3 Datasheet
Additional preview pages of the STU6N65K3 datasheet.

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Full PDF Text Transcription

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STF6N65K3, STFI6N65K3, STU6N65K3 N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, IPAK Datasheet — production data Features Order codes VDSS RDS(on) max. STF6N65K3 STFI6N65K3 650 V < 1.3 Ω STU6N65K3 ID 5.4 A Ptot 30 W 110 W ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Applications ■ Switching applications Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
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