STU6N65K3 Datasheet | STMicroelectronics

Features Order codes VDSS RDS(on) max. STF6N65K3 STFI6N65K3 650 V < 1.3 Ω STU6N65K3 ID 5.4 A Ptot 30 W 110 W - 100% avalanche tested - Extremely high dv/dt capability - Gate charge minimized - Very low intrinsic capacitance - Improved diode reverse recovery characteristics - Zener-protected Applications - Switching applications Description These Super MESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ Super MESH™ technology, bined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. 3 2 1 TO-220FP 1 2 3 I²PAKFP IPAK 2 1 Figure 1. Internal schematic diagram D(2,TAB) G(1) S(3) AM01476v1 Table 1. Device...