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STU9NC90Z - N-channel Power MOSFET

This page provides the datasheet information for the STU9NC90Z, a member of the STU9NC90ZI N-channel Power MOSFET family.

Datasheet Summary

Description

The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 STU8NC9.

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Datasheet preview – STU9NC90Z

Datasheet Details

Part number STU9NC90Z
Manufacturer STMicroelectronics
File Size 350.04 KB
Description N-channel Power MOSFET
Datasheet download datasheet STU9NC90Z Datasheet
Additional preview pages of the STU9NC90Z datasheet.

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Full PDF Text Transcription

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N-CHANNEL 900V - 1.1Ω - 7.6A Max220/I-Max220 Zener-Protected PowerMESH™III MOSFET TYPE STU8NC90Z STU9NC90ZI www.DataSheet4U.com s s s s s s STU8NC90Z STU8NC90ZI VDSS 900 V 900 V RDS(on) < 1.38Ω < 1.38Ω ID 7A 7A TYPICAL RDS(on) = 1.1Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 Max220 I-Max220 DESCRIPTION The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
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