Datasheet Details
| Part number | STW18NM80 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 534.80 KB |
| Description | N-channel Power MOSFET |
| Datasheet |
 STW18NM80 Datasheet
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General Description
These N-channel Power MOSFETs are developed using STMicroelectronics’ revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout.
These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics.
Key Features
- Order codes STB18NM80 STF18NM80 STP18NM80 STW18NM80 VDSS 800 V 800 V 800 V 800 V RDS(on) max < 0.295 Ω < 0.295 Ω < 0.295 Ω < 0.295 Ω ID 3 3 1 2 17 A 17 A (1) 17 A 17 A 1 D²PAK TO-220FP 1. Limited only by maximum temperature allowed 3.
- 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 2 2 1 3 TO-220 TO-247.