Datasheet Summary
N-channel 950 V, 0.110 Ω typ., 38 A MDmesh™ K5 Power MOSFET in a TO-247 package
- production data
3 2 1
TO-247
Figure 1: Internal schematic diagram
Features
Order code
VDS RDS(on) max ID
PTOT
STW40N95K5 950 V 0.130 Ω 38 A 450 W
- Industry’s lowest RDS(on) x area
- Industry’s best figure of merit (FoM)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring...