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STW45NM50 - N-CHANNEL MOSFET

General Description

This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout.

This device offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics.

Key Features

  • Order code STW45NM50 VDS 500 V RDS(on) max 0.1 Ω ID 45 A.
  • 100% avalanche tested.
  • High dv/dt and avalanche capabilities.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW45NM50 N-channel 500 V, 0.08 Ω typ., 45 A MDmesh™ Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code STW45NM50 VDS 500 V RDS(on) max 0.1 Ω ID 45 A  100% avalanche tested  High dv/dt and avalanche capabilities  Low input capacitance and gate charge  Low gate input resistance Applications  Switching applications Description This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. This device offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics.