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STW47NM60 - N-CHANNEL MOSFET

General Description

This improved version of MDmesh™ which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs.

The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche characteristics.

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www.DataSheet4U.com STW47NM60 N-CHANNEL 600V - 0.075Ω - 47A TO-247 MDmesh™Power MOSFET ADVANCED DATA TYPE STW47NM60 VDSS 600V RDS(on) < 0.09Ω Rds(on)*Qg 7.2 Ω*nC ID 47 A TYPICAL RDS(on) = 0.075Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION This improved version of MDmesh™ which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs. The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall performances that are significantly better than that of similar competition’s products.