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STW56N65DM2 - N-CHANNEL MOSFET

Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.

Features

  • Order code VDS STW56N65DM2 650 V RDS(on) max. 0.065 Ω ID PTOT 48 A 360 W.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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Datasheet preview – STW56N65DM2

Datasheet Details

Part number STW56N65DM2
Manufacturer STMicroelectronics
File Size 586.35 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet STW56N65DM2 Datasheet
Additional preview pages of the STW56N65DM2 datasheet.

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Full PDF Text Transcription

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STW56N65DM2 N-channel 650 V, 0.058 Ω typ., 48 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code VDS STW56N65DM2 650 V RDS(on) max. 0.065 Ω ID PTOT 48 A 360 W  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
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