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STWA70N65DM6 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STW70N65DM6, STWA70N65DM6 Datasheet N-channel 650 V, 36 mΩ typ.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fastrecovery diode series.

Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

DS12313 - Rev 2 - July 2019 For further information contact your local STMicroelectronics sales office.

Key Features

  • Order code VDS RDS(on) max. STW70N65DM6 STWA70N65DM6 650 V 40 mΩ.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected ID 68 A G(1).

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