W13009H transistor equivalent, high voltage fast switching npn power transistor.
* Low spread of dynamic parameters
* High voltage capability
* Minimum lot-to-lot spread for reliable operation
* Very high switching speed
Application
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Hollow emitter structure to enhance switching speeds.
3 2 1 TO-247
Figure 1. Internal schematic diagra.
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