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19 hits
• Multi-Epi process SJ-FET
• 700V @TJ = 150 ℃
• Typ. RDS(on) = 0.16Ω
• Ultra Low Gate Charge (typ. Qg = 36.5nC)
• 100% avalanche tested
SSF65R190S2
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID IDM VGSS
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Dra.
