SPN2012 Datasheet | SYNC POWER

DESCRIPTION The SPN2012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - DSC - LCD Display inverter FEATURES - N-Channel 20V/0.95A,RDS(ON)=310mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=360mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=460mΩ@VGS=1.8V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - ESD protected - SOT-23 package design PIN CONFIGURATION( SOT-23 ) PART MARKING 2021/12/15 Ver 3 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G S D Description Gate Source Drain ORDERING INFORMATION Part Number Package SPN2012S23RGB SOT-23 ※ SPN2012S23RGB : Tape Reel ; Pb - Free ; Halogen - Free Part Marking 22 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source...