* 650V/16A, RDS(ON)=280mΩ@VGS=10V
* High density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* Low.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly i.

The SPN28N65 is the N-Channel enhancement mode power field effect transistor which is fabricated using an advanced high voltage super junction MOSFET process which delivers high levels of performance and robustness in popular AC-DC applications. By p.

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