SPN8620 Datasheet | SYNC POWER

DESCRIPTION The SPN8620 is a dual N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN8620 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS - Powered System - DC/DC Converter - Load Switch FEATURES - 20V/4A, RDS(ON)=12mΩ@VGS=4.5V - 20V/2A,RDS(ON) =14mΩ@VGS=2.5V - 20V/1.5A,RDS(ON)=21mΩ@VGS=1.8V - High density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - PPAK3x3-8L- package design PIN CONFIGURATION (PPAK3x3-Dual 8L) PART MARKING 2024/03/25 Ver 3 Page 1 Dual N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source Gate Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN8620DN8RGB PPAK3x3-Dual 8L ※ SPN8620DN8RGB : Tape Reel ; Pb - Free ; Halogen - Free Part Marking SPN8620 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate - Source Voltage Continuous Drain Current- Pulsed Drain Current Power Dissipation @ TC=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient - Limited by the...