SPN8822A Datasheet | SYNC POWER

SPN8822A 6mon-Drain Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8822A is the mon-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching . APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - DSC - LCD Display inverter Features - 20V/5.8A,RDS(ON)=30mΩ@VGS=4.5V - 20V/5.0A,RDS(ON)=42mΩ@VGS=2.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - TSSOP- 8 package design PIN CONFIGURATION(TSSOP- 8) PART MARKING 2020/03/02 Ver.2 Page 1 SPN8822A 6mon-Drain Dual N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol D1 / D2 S1 S1 G1 G2 S2 S2 D1 / D2 ORDERING INFORMATION Part...