SPN8822A Datasheet (SYNC POWER) - Dual N-Channel MOSFET

SPN8822A, Dual N-Channel MOSFET

The SPN8822A is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage

SPN8822A Features

* 20V/5.8A,RDS(ON)=30mΩ@VGS=4.5V

* 20V/5.0A,RDS(ON)=42mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TSSOP

* 8 package design PIN CONFIGURATION(TSSOP

* 8) PART MARKING 2020/03/